방사광 X선 극저온 나노프로브 전고체 배터리 가넷 LLZO 고체전해질 계면 압전 응력 안정화 서보 C# SIMD 엔진

3. Zero-Allocation C# SIMD 전고체 배터리 계면 압력 제어 서보 엔진

using System;
using System.Runtime.CompilerServices;
using System.Runtime.Intrinsics;
using System.Runtime.Intrinsics.X86;

namespace ZeliDesk.Stem.Synchrotron.LlzoBattery
{
    public readonly ref struct LlzoStressState
    {
        public readonly float CurrentStressMpa;
        public readonly float OverpotentialMv;
        public readonly float PiezoDriveVoltage;
        public readonly bool DendriteSuppressed;

        public LlzoStressState(float stress, float overpotential, float voltage, bool suppressed)
        {
            CurrentStressMpa = stress;
            OverpotentialMv = overpotential;
            PiezoDriveVoltage = voltage;
            DendriteSuppressed = suppressed;
        }
    }

    public sealed class LlzoBatteryServoEngine
    {
        private const float SampleRateHz = 10000.0f;
        private const float Dt = 1.0f / SampleRateHz;

        // 목표 계면 압축 응력 (7.5 MPa)
        private const float TargetStressMpa = 7.5f;
        private const float MinSafeStressMpa = 5.0f;
        private const float MaxSafeStressMpa = 12.0f;

        // PID 및 비선형 압전 제어 상태
        private float _stressIntegral = 0.0f;
        private float _prevStressError = 0.0f;
        private const float Kp = 15.0f;
        private const float Ki = 120.0f;
        private const float Kd = 0.012f;

        [MethodImpl(MethodImplOptions.AggressiveInlining | MethodImplOptions.AggressiveOptimization)]
        public LlzoStressState RegulateInterfaceStress(
            float measuredLoadCellForceN,
            float cellContactAreaMm2,
            float measuredOverpotentialMv,
            float currentDensityMaCm2)
        {
            // 1. 실제 계면 접촉 응력 계산: Stress (MPa) = Force (N) / Area (mm^2)
            float currentStressMpa = measuredLoadCellForceN / MathF.Max(cellContactAreaMm2, 0.1f);

            // 2. 응력 오차 산출
            float stressError = TargetStressMpa - currentStressMpa;

            // 3. 적분 연산 및 안티-와인드업
            _stressIntegral += stressError * Dt;
            _stressIntegral = Math.Clamp(_stressIntegral, -2.0f, 2.0f);

            float stressDerivative = (stressError - _prevStressError) * SampleRateHz;
            _prevStressError = stressError;

            // 4. 고속 전류 밀도 변동에 따른 피드포워드 가산
            // 전류 밀도가 높을수록 덴드라이트 핵생성 압력이 증가하므로 선제적 응력 보강
            float ffStress = currentDensityMaCm2 * 0.25f;

            float controlSignal = (Kp * stressError) + (Ki * _stressIntegral) + (Kd * stressDerivative) + ffStress;

            // 압전 스택 액추에이터 구동 전압 (0 ~ 150V)
            float piezoVoltage = Math.Clamp(60.0f + controlSignal, 0.0f, 150.0f);

            // 덴드라이트 억제 안정성 판정
            bool isSuppressed = currentStressMpa >= MinSafeStressMpa && currentStressMpa <= MaxSafeStressMpa;

            return new LlzoStressState(
                stress: currentStressMpa,
                overpotential: measuredOverpotentialMv,
                voltage: piezoVoltage,
                suppressed: isSuppressed
            );
        }
    }
}