극저온 방사광 X-선 나노회절 기반 분수 체른 절연체(Fractional Chern Insulator, FCI) 애니온 브레이딩(Anyonic Braiding) 능동 서보 아키텍처 (.NET 9 C# SIMD)

using System;
using System.Runtime.CompilerServices;
using System.Runtime.InteropServices;
using System.Runtime.Intrinsics;
using System.Runtime.Intrinsics.X86;

namespace ZeliDesk.Quantum.TopologicalQuantumComputing
{
    /// <summary>
    /// 분수 체른 절연체(FCI) 비가환 애니온 브레이딩(Anyonic Braiding) 능동 서보
    /// GC 제로 할당 ref struct 및 AVX-256 SIMD 가속화
    /// </summary>
    public ref struct FciAnyonicBraidingServo
    {
        private readonly ReadOnlySpan<float> _berryCurvatures;   // 국소 베리 곡률 Omega
        private readonly ReadOnlySpan<float> _targetPhases;       // 목표 브레이딩 위상 theta_target (rad)
        private readonly Span<float> _accumulatedPhases;         // 연산된 누적 기하학적 위상 (rad)
        private readonly Span<float> _gateBiasVoltages;          // 정전 나노 팁 전압 지령 (V)

        private readonly float _idealBerry;    // 균일 이상 베리 곡률
        private readonly float _braidingSpeed; // 브레이딩 각속도 (rad/s)
        private readonly float _voltageGain;   // 나노팁 전압 게인 (V/rad)

        [MethodImpl(MethodImplOptions.AggressiveInlining)]
        public FciAnyonicBraidingServo(
            ReadOnlySpan<float> berryCurvatures,
            ReadOnlySpan<float> targetPhases,
            Span<float> accumulatedPhases,
            Span<float> gateBiasVoltages,
            float idealBerry = 1.0f,
            float braidingSpeed = 25000.0f,
            float voltageGain = 1.8f)
        {
            _berryCurvatures = berryCurvatures;
            _targetPhases = targetPhases;
            _accumulatedPhases = accumulatedPhases;
            _gateBiasVoltages = gateBiasVoltages;
            _idealBerry = idealBerry;
            _braidingSpeed = braidingSpeed;
            _voltageGain = voltageGain;
        }

        /// <summary>
        /// 8채널 애니온 이동 경로의 베리 위상 및 게이트 전압을 SIMD 병렬 연산
        /// </summary>
        [MethodImpl(MethodImplOptions.AggressiveOptimization)]
        public void ProcessBraidingStep()
        {
            int length = _berryCurvatures.Length;
            int simdLength = length - (length % 8);

            Vector256<float> vIdeal = Vector256.Create(_idealBerry);
            Vector256<float> vGain = Vector256.Create(_voltageGain);
            Vector256<float> vBaseV = Vector256.Create(0.45f);

            int i = 0;
            if (Avx2.IsSupported)
            {
                for (; i < simdLength; i += 8)
                {
                    Vector256<float> vOmega = Vector256.Create(MemoryMarshal.Cast<float, Vector256<float>>(_berryCurvatures.Slice(i, 8))[0]);
                    Vector256<float> vTgtPhase = Vector256.Create(MemoryMarshal.Cast<float, Vector256<float>>(_targetPhases.Slice(i, 8))[0]);

                    // 베리 곡률 왜곡비: Ratio = Omega / Ideal
                    Vector256<float> vRatio = Avx.Divide(vOmega, vIdeal);

                    // 유효 기하학적 위상: Phase = TgtPhase * Ratio
                    Vector256<float> vPhase = Avx.Multiply(vTgtPhase, vRatio);

                    // 위상 오차: Error = Phase - TgtPhase
                    Vector256<float> vErr = Avx.Subtract(vPhase, vTgtPhase);

                    // 전극 보정 전압 = BaseV - Gain * Error
                    Vector256<float> vGateV = Avx.Subtract(vBaseV, Avx.Multiply(vErr, vGain));

                    vPhase.CopyTo(_accumulatedPhases.Slice(i, 8));
                    vGateV.CopyTo(_gateBiasVoltages.Slice(i, 8));
                }
            }

            for (; i < length; i++)
            {
                float ratio = _berryCurvatures[i] / _idealBerry;
                float phase = _targetPhases[i] * ratio;
                float err = phase - _targetPhases[i];
                _accumulatedPhases[i] = phase;
                _gateBiasVoltages[i] = 0.45f - (_voltageGain * err);
            }
        }
    }
}